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SPP17N80C3 Specification,DataSheet,PDF...
Specifications: MOSFET N-CH 800V 17A TO-220AB
Mounting Type:Through Hole
FET Type:N-Channel
Drain to Source Voltage (Vdss):800V
Current - Continuous Drain (Id) @ 25° C:17A
Rds On (Max) @ Id, Vgs @ 25° C:290 mOhms @ 11A, 10V
Input Capacitance (Ciss) @ Vds:2320pF @ 25V
Power - Max:208W
Gate Charge (Qg) @ Vgs:177nC @ 10V
Package / Case:TO-220AB
Gate to Source Voltage (Vgs Max):20V

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Min/Max : 1
Pack : Tube
Manufacturer : Infineon Technologies
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